0% Complete
صفحه اصلی
/
ششمین کنفرانس بین المللی میکروالکترونیک ایران
Enhanced sensitivity of ISFET pH-sensor utilizing reduced Graphene Oxide
نویسندگان :
Hossein Rezaei Estakhroyeh
1
Mahdiyeh Mehran
2
Esmat Rashedi
3
1- دانشگاه شهید باهنر کرمان
2- دانشگاه شهید باهنر کرمان
3- دانشگاه تحصیلات تکمیلی صنعتی و فناوری پیشرفته کرمان
کلمات کلیدی :
Gate-Sensing Layer،Ion-Sensitive Field-Effect Transistor ISFET،Reduced Graphene Oxide،pH-sensor
چکیده :
With an emphasis on the sensitivity of various gate-sensing layers, the current work sought to examine how well Ion-Sensitive Field-Effect Transistors (ISFETs) function as pH sensors. Reduced Graphene Oxide (rGO) has been investigated as a potential sensing material for ISFET sensors, however Metal Oxides have historically been the material of choice for the gate-sensing layer because of its stability and dependability. ISFET sensors using rGO as the sensing material and those with traditional Metal Oxide gate layers were thoroughly compared. The performance of the sensors was assessed under a range of operating situations by multiphysics modeling with finite element methods using COMSOL Multiphysics software. The results showed a considerable improvement in sensor performance when rGO was used as the gate-sensing layer. A lower threshold voltage needed to activate the sensor and a higher sensitivity to pH variations were two of these enhancements. In ISFET sensors for pH monitoring, this work emphasizes the benefits of adopting alternate gate materials, such rGO. For the purpose of creating more dependable and efficient pH-sensing instruments for a range of scientific and industrial applications, it is helpful to analyze the fundamental mechanics and performance characteristics of the sensors. The results show that rGO-ISFETs have a higher sensitivity to pH variations and a lower threshold voltage (approximately 0.7988 V), with a sensitivity of 59.7 mV/pH compared to 58.2 mV/pH for Ta2O5-based sensors. These results suggest that rGO-based ISFET sensors have higher sensitivity and better discrimination capabilities, making them more suitable for the precise pH measurement in the scientific and industrial applications.
لیست مقالات
لیست مقالات بایگانی شده
Design of a High-Efficiency Deep Bias Class-AB Power Amplifier With 70% PAE at P1dB
Fazel Ziraksaz - Alireza Hassanzadeh
طراحی سیستماتیک موجبر فوتونی مبتنی بر سیلیکون نیترید در محدوده نور مرئی
افشین احمدپور - امیر حبیب زاده شریف - فائزه بهرامی چناقلو
Beyond Silicon: A Roadmap for Graphene-Based Field-Effect Transistors in RF Amplifiers, Biosensing, and Integrated Flexible Electronics
Sina Pourhajiagha Golestani - Esmaeil Najafiaghdam - Kiyumars Jalili
A Low-Noise Amplifier with Bandwidth Extension and Noise Cancellation for 5G Receivers
Pardis Javanbakht - Mortaza Mojarad
Current Source Impedance Effect on Static Performance of Hybrid R-2R DAC
Mohsen Azimikia - Arash Esmaili - Hadiseh Babazadeh
A Linear Transconductor for Gm-C Filter Applied in a Switch-Mode Power Supply for IoT Applications
Sanaz Gerami - Abolfazl Rajaiyan - Yas Hosseini Tehrani - Seyed Mojtaba Atarodi
A Nanowatt Low Voltage Subthreshold CMOS Voltage Reference Based On 2-T
Nima Dehghan - Mohammad Yavari
Unified Modeling Framework for Dynamic Analysis of a MEMS Resonant Biosensor
Ali Selk Ghafari
Impact of Geometrical and Process Design Parameters on the Performance of Schottky Barrier Reconfigurable Field Effect Transistor
Hamid Reza Heydari - Zahra Ahangari - Hamed Nematian - Kian Ebrahim Kafoori
A Nonlinear, Low-Power, VCO-Based ADC for Neural Recording Applications
Reza Shokri - Yarallah Koolivand - Omid Shoaei - Orazio Aiello - Daniele Caviglia
بیشتر
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 43.4.0