کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / هفتمین کنفرانس بین المللی میکروالکترونیک ایران

A Transimpedance Amplifier With Extended Bandwidth in 90-nm CMOS Technology

نویسندگان :

Ahmad Najjari¹ Mohammad Yavari²

1- دانشگاه صنعتی امیرکبیر 2- دانشگاه صنعتی امیرکبیر

کلمات کلیدی :

Transimpedance Amplifier،photodiode capacitor،bandwidth،noise،sensitivity،Bit Error Rate (BER)،Figure of Merit

چکیده :

This paper presents the design of a 47.88 Gbit/s transimpedance amplifier (TIA) in 90-nm CMOS technology, specifically optimized to handle a 100 fF photodiode capacitor. The core strategy to overcome bandwidth limitations is the introduction of inductors in the feedback path, which creates self-resonance. This approach generates new zeros and poles, effectively neutralizing the dominant pole of the system to achieve a Butterworth frequency response with minimal peaks and overshoots. The proposed circuit TIA demonstrates a high gain of 38.2 dBΩ and a -3 dB bandwidth extending up to 34.2 GHz. The design successfully reduces noise, resulting in a low input-referred noise current of 17.27 pA/Hz. With an estimated input sensitivity of 23.33 µA for a bit error rate (BER) of ≤10−12, the circuit is highly efficient. The TIA consumes only 3.82 mW from a 1.2 V supply, yielding an excellent Figure of Merit (FoM) of 727.