کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / پنجمین کنفرانس بین المللی میکروالکترونیک ایران

Broadened graded asymmetric waveguide structure for low divergence 915nm diode laser

نویسندگان :

Seyed Peyman Abbasi¹ Arash Hodaei²

1- مرکز ملی علوم و فنون لیزر ایران 2- مرکز ملی علوم و فنون لیزر ایران

کلمات کلیدی :

Graded refractive index،Asymmetric structure،Beam divergence،Laser diode

چکیده :

Multi-chip beam combining is used for high-power laser diodes. In this method, fast collimation of the laser diode is an important process. Laser diode beam divergence is the main parameter for beam shaping and fiber optic coupling. Increasing the waveguide layer thickness in epitaxial design is the conventional method to decrease beam divergence. In this paper, the 915nm broadened graded asymmetric structure is introduced to decrease the divergence without increasing the optical power. The asymmetric waveguide shifted the vertical optical field to the n-section, which has lower free carrier loss than the p-section. Furthermore, the linearly graded refractive index was used to control the modes. The main target of this research is to decrease the divergence. In the proposed structure, fast divergence (FWHM) of 24 degrees and threshold current density of less than 650A/cm2 was achieved.