کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / هفتمین کنفرانس بین المللی میکروالکترونیک ایران

Circuit Analysis and Design of a Low-Noise SiGe:C HBT Amplifier with Enhanced Input Matching

نویسندگان :

Sedighe Babaei Sedaghat¹ Mortaza Mojarad² Fateme Zadehpariza³

1- دانشگاه ارومیه 2- دانشگاه ارومیه - دانشکده برق و کامپیوتر 3- دانشگاه جهرم

کلمات کلیدی :

Low Noise Amplifier (LNA)،SiGe:C technology،Hetrojunction Bipolar Transistor (HBT)،Innovation High Performance (IHP)،Bluetooth

چکیده :

In this paper, we present a detailed circuit analysis and design methodology for a low-noise amplifier (LNA) based on SiGe:C heterojunction bipolar transistors (HBTs). The proposed LNA employs a novel LC ladder-based input matching network that generates left-half plane (LHP) zeros to cancel dominant poles, ensuring a flat impedance response across a broad frequency range. This technique not only improves input matching but also contributes to a reduced noise figure (NF). A key innovation in this work is the active cancellation of transistor thermal noise at the output node, leading to a significant NF improvement. The LNA is designed and simulated using a 0.13μm SiGe:C HBT process, with rigorous analysis of stability, linearity, and noise performance. Simulation results demonstrate a maximum gain of 26.82 dB with a noise figure of just 2.63 dB, while consuming 40 mW from a 3.3 V supply. The input and output return losses are below -14.9 dB and -22.39 dB, respectively, confirming excellent impedance matching. The proposed structure is thoroughly analyzed in terms of pole-zero cancellation, noise reduction mechanisms, and trade-offs between gain, power, providing key insights for high-performance amplifier design.