کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / پنجمین کنفرانس بین المللی میکروالکترونیک ایران

Base Transit Time Investigation of InP/InGaAs HBT Optoelectronic Mixer Using Different Base Doping Profiles

نویسندگان :

Hassan Kaatuzian¹ Mehrdad Ghasemi² Mahdi NoroozOliaei³

1- دانشگاه صنعتی امیرکبیر 2- دانشگاه صنعتی امیرکبیر 3- دانشگاه صنعتی خواجه نصیر طوسی

کلمات کلیدی :

Base Doping Gaussian Profile،Base Width،Current Gain،Heterojunction Bipolar Transistors (HBTs)،Transit time

چکیده :

Heterojunction Bipolar Transistors (HBTs) are a type of bipolar transistors that have fabulous advantages for employing them in electronic circuits such as their fast speed. A key parameter of HBTs is transit time which determines the capabilities of these devices. Employing of lower transit time (better frequency response) is feasible by considering the base doping different profiles. In this paper, the behavior of the transit time parameter has been investigated for the mentioned near Gaussian and continuously decreasing doping profiles. It can be used to obtain even higher frequency responses in single or cascade configurations for 1.55-micron wavelength optoelectronic mixers. The idea in this study will be applied to HBTs in modulating the frequency range between gigahertz to terahertz.