0% Complete
صفحه اصلی
/
ششمین کنفرانس بین المللی میکروالکترونیک ایران
Frequency Response and Design Based on gm/ID of Amplifier in CNFET Technology
نویسندگان :
S. Mohammadali Zanjani
1
Mehdi Dolatshahi
2
Massoud Dousti
3
Zahra Alaie
4
Ata Jahangir Moshayedi
5
Arash Mehrabi
6
1- Islamic Azad University, Najafabad, Iran
2- Islamic Azad University, Najafabad, Iran
3- Science and Research Branch, Islamic Azad University, Tehran, Iran
4- Islamic Azad University, Najafabad, Iran
5- School Of Information Engineering, Jiangxi University Of Science And Technology, No 86 Hongqi Ave, Ganzhou, Jiangxi,341000, China
6- Najafabad Branch, Islamic Azad University, Najafabad, Iran
کلمات کلیدی :
Carbon Nanotube Field Effect Transistors (CNFETs)،pitch parameter،chirality،gm/ID
چکیده :
The downscaling of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) elements in the nanoscale, leads to the deviation of V-I characteristics compared with the ideal behavior. For instance, in the elements with short channels, Drain voltage considerably impacts the potential barrier in a way that the Source injects the carriers into the channel without any Gate role. This is due to the decrease in the height of the barrier by the Drain. An appropriate alternative for the MOS technology is the Carbon Nanotube Field Effect Transistors (CNFETs). The high mobility of carriers in the CNT results in their higher speed in CNFET transistors. Low power dissipation, nano dimension, low noise figure, the similarity of performance with the MOSFETs, and the ballistic transition of the carriers are their advantages. In this paper, together with the study of CNFET’s structure and models, the impact of variations of input voltage, the number of nanotubes, pitches, and chirality on the current, threshold voltage, and V-I characteristics of a common source amplifier are studied. Moreover, it is observed that in the same specifications of the aspect ratio and bias, in the CNFET transistors, the gm/ID figure according to the normalized current in the Weak Inversion and Moderate regions is higher than the MOSFETs, shows that this technology as the fair choice can be an appropriate alternative for the MOSFETs.
لیست مقالات
لیست مقالات بایگانی شده
A differential ring VCO with a new structure for the pre-charger and pre-discharger method
Vahid Khodadadi Viaee - Mahdi Alijani - Adib Abrishamifar
طراحی و تحلیل یک انتگرالگیر زمانی مرتبه کسری در فناوری هایبرید پلاسمونی گرافنی
افشین احمدپور - امیر حبیب زاده شریف - فائزه بهرامی چناقلو
Synthesis of TiNb2O7 by mechanical alloying and subsequent heat treatment as an anode material for Li-ion batteries
Shiva Rashidi Kia - Mehdi Khodae
A Low-Power Fully Differential LC Oscillator with Phase Noise Reduction for LTE Applications
Yeganeh Moradzadeh Rezaei - SIROUS TOOFAN - Jafar Sobhi
First Principles Study of Optical and Electrical Properties for Mixed-halide 2D BA2PbBr4-xClx (x=0, 2, and 4) as an Active Layer of Perovskite Light Emitting Diode
ُSamad Shokouhi - Seyedeh Bita Saadatmand - Vahid Ahmadi
ساختار گرافنی جاذب کامل چند باندی تراهرتزی با قابلیت تنطیم فرکانس و مستقل از قطبش
یوسف رفیق ایرانی - جواد جاویدان - حمید حیدرزاده
A High-Precision Low-Dropout Regulator With High Current Efficiency and Slew-Rate Enhancement
Yeganeh Moradzadeh Rezaei - Mortaza Mojarad
Plasmonic CH4 Sensor Using an MIM Waveguide with a Hexagonal Cavity and Silver Square Island
Mohammad Ghanavati - Mohammad Azim Karami
ZnO-Based Surface Acoustic Wave Droplet Sensor
Farzaneh Soleimanpour - Behdad Barahimi - Sara Darbari - Mohammad kazem Moravvej farshi
Few-layered phosphorene synthesis by CVD approach as an anode for sodium-ion battery
Pooya Dehghan - Soraya Hoornam - Zeinab Sanaee - Shams Mohajerzadeh
بیشتر
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 41.5.5