0% Complete
صفحه اصلی
/
ششمین کنفرانس بین المللی میکروالکترونیک ایران
Frequency Response and Design Based on gm/ID of Amplifier in CNFET Technology
نویسندگان :
S. Mohammadali Zanjani
1
Mehdi Dolatshahi
2
Massoud Dousti
3
Zahra Alaie
4
Ata Jahangir Moshayedi
5
Arash Mehrabi
6
1- Islamic Azad University, Najafabad, Iran
2- Islamic Azad University, Najafabad, Iran
3- Science and Research Branch, Islamic Azad University, Tehran, Iran
4- Islamic Azad University, Najafabad, Iran
5- School Of Information Engineering, Jiangxi University Of Science And Technology, No 86 Hongqi Ave, Ganzhou, Jiangxi,341000, China
6- Najafabad Branch, Islamic Azad University, Najafabad, Iran
کلمات کلیدی :
Carbon Nanotube Field Effect Transistors (CNFETs)،pitch parameter،chirality،gm/ID
چکیده :
The downscaling of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) elements in the nanoscale, leads to the deviation of V-I characteristics compared with the ideal behavior. For instance, in the elements with short channels, Drain voltage considerably impacts the potential barrier in a way that the Source injects the carriers into the channel without any Gate role. This is due to the decrease in the height of the barrier by the Drain. An appropriate alternative for the MOS technology is the Carbon Nanotube Field Effect Transistors (CNFETs). The high mobility of carriers in the CNT results in their higher speed in CNFET transistors. Low power dissipation, nano dimension, low noise figure, the similarity of performance with the MOSFETs, and the ballistic transition of the carriers are their advantages. In this paper, together with the study of CNFET’s structure and models, the impact of variations of input voltage, the number of nanotubes, pitches, and chirality on the current, threshold voltage, and V-I characteristics of a common source amplifier are studied. Moreover, it is observed that in the same specifications of the aspect ratio and bias, in the CNFET transistors, the gm/ID figure according to the normalized current in the Weak Inversion and Moderate regions is higher than the MOSFETs, shows that this technology as the fair choice can be an appropriate alternative for the MOSFETs.
لیست مقالات
لیست مقالات بایگانی شده
Design of 1-1-1 Cascaded Discrete-Time Delta-Sigma Modulator based on Tracking Quantizer
Mohsen Ghaemmaghami - Shahbaz Reyhani
Optimized design of Lower Complexity Reversible Toffoli Gate in QCA Technology
Saeid Seyedi - Hatam Abdoli
Three-Phase Bidirectional Integrated Meter Using Hall Effect Sensor in 0.5um CMOS Process
Shayan Anzali - Morteza Mousazadeh - Khayrollah Hadidi
Light Trapping in InAsSb-based barrier Photodetectors for Enhanced Mid-Wave Infrared Bio-Medical Sensing: A Study on Jurkat Biomarker Detection
Maryam Shaveisi - Peiman Aliparast - Ng Sha Shiong
Design of a Calibration Circuit for Adaptive Phase-Locked Loop in the 5GHz Range Using CMOS 180nm Technology
Reza MirAlvandi - Mahdi Ehsanian
Neural networks & logistic regression for FPGA hardware trojan detection
Milad Pazira - Yasser Baleghi - Mohammad-Ali Mahmoodpour
Frequency Response and Design Based on gm/ID of Amplifier in CNFET Technology
S. Mohammadali Zanjani - Mehdi Dolatshahi - Massoud Dousti - Zahra Alaie - Ata Jahangir Moshayedi - Arash Mehrabi
A Nonlinear, Low-Power, VCO-Based ADC for Neural Recording Applications
Reza Shokri - Yarallah Koolivand - Omid Shoaei - Orazio Aiello - Daniele Caviglia
Analysis of electrostatic interaction between a charge trap and a quantum dot based single electron transistor
Fatemeh Hamedvasighi - Majid Shalchian
2D Axisymmetric Modeling of Circular PCB Coils and Solenoids in COMSOL Multiphysics
Farshad Gozalpour - Mohammad Yavari
بیشتر
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 41.5.5