کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / ششمین کنفرانس بین المللی میکروالکترونیک ایران

Frequency Response and Design Based on gm/ID of Amplifier in CNFET Technology

نویسندگان :

S. Mohammadali Zanjani¹ Mehdi Dolatshahi² Massoud Dousti³ Zahra Alaie⁴ Ata Jahangir Moshayedi⁵ Arash Mehrabi⁶

1- Islamic Azad University, Najafabad, Iran 2- Islamic Azad University, Najafabad, Iran 3- Science and Research Branch, Islamic Azad University, Tehran, Iran 4- Islamic Azad University, Najafabad, Iran 5- School Of Information Engineering, Jiangxi University Of Science And Technology, No 86 Hongqi Ave, Ganzhou, Jiangxi,341000, China 6- Najafabad Branch, Islamic Azad University, Najafabad, Iran

کلمات کلیدی :

Carbon Nanotube Field Effect Transistors (CNFETs)،pitch parameter،chirality،gm/ID

چکیده :

The downscaling of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) elements in the nanoscale, leads to the deviation of V-I characteristics compared with the ideal behavior. For instance, in the elements with short channels, Drain voltage considerably impacts the potential barrier in a way that the Source injects the carriers into the channel without any Gate role. This is due to the decrease in the height of the barrier by the Drain. An appropriate alternative for the MOS technology is the Carbon Nanotube Field Effect Transistors (CNFETs). The high mobility of carriers in the CNT results in their higher speed in CNFET transistors. Low power dissipation, nano dimension, low noise figure, the similarity of performance with the MOSFETs, and the ballistic transition of the carriers are their advantages. In this paper, together with the study of CNFET’s structure and models, the impact of variations of input voltage, the number of nanotubes, pitches, and chirality on the current, threshold voltage, and V-I characteristics of a common source amplifier are studied. Moreover, it is observed that in the same specifications of the aspect ratio and bias, in the CNFET transistors, the gm/ID figure according to the normalized current in the Weak Inversion and Moderate regions is higher than the MOSFETs, shows that this technology as the fair choice can be an appropriate alternative for the MOSFETs.