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صفحه اصلی
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پنجمین کنفرانس بین المللی میکروالکترونیک ایران
A New Design for 1.75 to 2.55 GHz GaN Power Amplifier with More Than 40 dBm Output Power and 12 dB Maximum Gain
نویسندگان :
Marzieh Chegini
1
Mahmoud Kamarei
2
HojjatAllah Nemati
3
1- دانشگاه تهران
2- دانشگاه تهران
3- دانشگاه علم و صنعت ایران
کلمات کلیدی :
class AB power amplifier،GaN HEMT،2.45 GHz،CGH40010F،10 watt PA
چکیده :
This paper presents the design, implementation, and measurement results for a 1.75~2.55 GHz Power Amplifier. The PA was Designed and fabricated with a CGH40010-F GaN device from Wolfspeed. The manufactured PA shows 42.2-dBm peak output power, with more than 47% average drain efficiency over the 1.75~2.55 GHz frequency range..
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بیشتر
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 43.9.1
