کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / هفتمین کنفرانس بین المللی میکروالکترونیک ایران

Design an active inductor independent of process, voltage and temperature

نویسندگان :

Fatemeh Miri¹ Mehdi Ehsanian²

1- دانشگاه خواجه نصیر الدین طوسی 2- دانشگاه خواجه نصیر الدین طوسی

کلمات کلیدی :

Active inductor،PVT-independent active inductor،High-frequency radio circuit design،CMOSFETS،integrated circuit design

چکیده :

This document is a design of ACTIVE INDUCTORS independent of process variations, supply voltage, and temperature (PVT) is investigated. Active inductors, used in many electronic applications, especially in complex circuits, are affected by environmental changes and manufacturing process conditions. These variations can lead to changes in key parameters such as inductance, self-resonance frequency, and quality factor. In this paper, a novel approach for designing active inductors is presented, which can adjust the inductance parameter of the active inductor independently of PVT conditions. The goal of this design is to reduce the negative effects of process, voltage, and temperature variations on the performance of active inductors and to improve the efficiency and stability of electronic systems and complex circuits. Simulation results demonstrate that the designed active inductors can maintain stable and optimal performance under various PVT conditions. This research can contribute to enhancing the reliability and efficiency of electronic circuits against environmental changes and manufacturing process variations. The designed inductor, in a 180nm CMOS technology at a frequency of 250 MHz, process variations improved by 80%, supply voltage variations improved by 74%, and temperature remained unchanged