کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / هفتمین کنفرانس بین المللی میکروالکترونیک ایران

Quantitative study of Temperature-Dependent BandGap Energy and Its Influence on Threshold Potential Characteristics of MOS Devices

نویسندگان :

Hanieh Khakvatan¹ Sarang Kazeminia²

1- دانشگاه صنعتی ارومیه 2- دانشگاه صنعتی ارومیه

کلمات کلیدی :

Bandgap Energy،Threshold Voltage،Temperature Dependent

چکیده :

In this paper, the MOS transistor threshold voltage equation is reconstructed by explicitly considering the temperature dependence of the semiconductor bandgap energy Eg(T), which has been considered as a temperature-independent constant in previous studies. The variation of Eg with absolute temperature is approximated using a fourth-degree polynomial derived via the Lagrangian interpolation method over the temperature range of −40°C to 100°C. This polynomial approximation is then employed to compute a modified threshold voltage model for MOS transistors. Theoretical analysis based on the reconstructed temperature-dependent equations show that the value of threshold voltage deviates from the case of considering constant Eg by +25mVolts and -22mVolts at -40ºC and +100 ºC, respectively. Around 24% error is reported for temperature coefficients of both the Fermi level and the threshold voltage of the MOS device.