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صفحه اصلی
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هفتمین کنفرانس بین المللی میکروالکترونیک ایران
Quantitative study of Temperature-Dependent BandGap Energy and Its Influence on Threshold Potential Characteristics of MOS Devices
نویسندگان :
Hanieh Khakvatan
1
Sarang Kazeminia
2
1- دانشگاه صنعتی ارومیه
2- دانشگاه صنعتی ارومیه
کلمات کلیدی :
Bandgap Energy،Threshold Voltage،Temperature Dependent
چکیده :
In this paper, the MOS transistor threshold voltage equation is reconstructed by explicitly considering the temperature dependence of the semiconductor bandgap energy Eg(T), which has been considered as a temperature-independent constant in previous studies. The variation of Eg with absolute temperature is approximated using a fourth-degree polynomial derived via the Lagrangian interpolation method over the temperature range of −40°C to 100°C. This polynomial approximation is then employed to compute a modified threshold voltage model for MOS transistors. Theoretical analysis based on the reconstructed temperature-dependent equations show that the value of threshold voltage deviates from the case of considering constant Eg by +25mVolts and -22mVolts at -40ºC and +100 ºC, respectively. Around 24% error is reported for temperature coefficients of both the Fermi level and the threshold voltage of the MOS device.
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بیشتر
ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 44.5.0
