کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / هفتمین کنفرانس بین المللی میکروالکترونیک ایران

A Linear Wideband CMOS Balun-LNA With Complementary Predistortion Technique

نویسندگان :

Mohammad Mohammadi¹ Mohammad Yavari²

1- دانشگاه صنعتی امیرکبیر 2- دانشگاه صنعتی امیرکبیر

کلمات کلیدی :

CMOS low-noise amplifier،balun،linearity enhancement،predistortion technique،wideband LNA

چکیده :

In this article, an active balun low-noise amplifier (LNA) with auxiliary transistors with noise cancellation (NC) technique and linearity improvement is presented. This balun-LNA consists of common-gate common-source (CG-CS) stages with auxiliary transistors biased in weak inversion region which boost the gain and cancels the 2nd-order intermodulation (IMD2) and third-order intermodulation (IMD3) terms to improve the second-order input intercept point (IIP2) and third-order input intercept point (IIP3), respectively. The proposed balun-LNA is designed in TSMC 65 nm with Spectre-RF using a supply voltage of 1.7 V in the frequency range of 0.1 GHz-4 GHz. The simulations results show an S21 of 16.9 dB, minimum NF of 3.9 dB, S11 of lower than -10 dB, IIP2 of 28 dBm, IIP3 of -2.74 dBm while consuming 12.68 mW power.