کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / ششمین کنفرانس بین المللی میکروالکترونیک ایران

Study of Nanoscale Material NEMS Resonant Pressure Sensors: Simulation and Comparison

نویسندگان :

Amir Noroolahi¹ Abolfazl Hosseini²

1- دانشگاه آزاد اسلامی واحد یادگار امام خمینی(ره) شهرری 2- دانشگاه آزاد اسلامی واحد یادگار امام خمینی(ره) شهرری

کلمات کلیدی :

nanoscale Material،Resonant Frequency،Pressure Sensor،Nanoelectromechanical Systems (NEMS

چکیده :

In this manuscript, we offer a comprehensive investigation of the operational principle, performance assessment, and prospects of resonant pressure sensors that rely on nanoscale material membranes. The membrane possesses a radius of 2500 nm and a thickness of 25 nm. Our simulation setup consists of a multi-layer 2D-dimensional materials membrane suspended on a Si substrate and stimulated by an electrostatic excitation. When acting as a resonator, the membrane displays a frequency shift in different materials of roughly 56~82 MHz in response to pressures ranging from zero to 100 kPa applied pressure. Our sensor exhibits a sensitivity of 556 Hz/Pa (WS2) ~763 Hz/Pa (h-BN). The results demonstrate that the maximum sensitivity belongs to h-BN which is 300 times higher than that of a silicon-based resonant pressure sensor, despite employing a membrane area that is 1200 times smaller. Our proposed pressure sensor exploits the mechanical and electrical properties of 2D materials to enable exceptionally accurate pressure measurements.