کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / پنجمین کنفرانس بین المللی میکروالکترونیک ایران

Modeling GaN-HEMT Electrostatic Band Diagram under full depletion approximation

نویسندگان :

Behnam Jafari Touchaei¹ Majid Shalchian²

1- دانشگاه صنعتی امیرکبیر 2- دانشگاه صنعتی امیرکبیر

کلمات کلیدی :

Energy band diagram،Gallium Nitride HEMT (GaN-HEMT)،high electron mobility transistor (HEMT)،modeling،piezoelectric and spontaneous polarization

چکیده :

In this work, we propose a new approach to derive the GaN-HEMT energy band diagram under full depletion conditions. The model considers the vertical electric field and vertical potential within the GaN-HEMT from gate to bulk. The effect of polarized ions due to piezoelectric and spontaneous polarization is also considered. The spike-shaped electric field within the 2D electron gas predicted by the model follows TCAD simulation results. The model is validated by TCAD and by EPFL HEMT model under the depletion condition.

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بیشتر

ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 41.5.5