کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / پنجمین کنفرانس بین المللی میکروالکترونیک ایران

Modeling GaN-HEMT Electrostatic Band Diagram under full depletion approximation

نویسندگان :

Behnam Jafari Touchaei¹ Majid Shalchian²

1- دانشگاه صنعتی امیرکبیر 2- دانشگاه صنعتی امیرکبیر

کلمات کلیدی :

Energy band diagram،Gallium Nitride HEMT (GaN-HEMT)،high electron mobility transistor (HEMT)،modeling،piezoelectric and spontaneous polarization

چکیده :

In this work, we propose a new approach to derive the GaN-HEMT energy band diagram under full depletion conditions. The model considers the vertical electric field and vertical potential within the GaN-HEMT from gate to bulk. The effect of polarized ions due to piezoelectric and spontaneous polarization is also considered. The spike-shaped electric field within the 2D electron gas predicted by the model follows TCAD simulation results. The model is validated by TCAD and by EPFL HEMT model under the depletion condition.

لیست مقالات

لیست مقالات بایگانی شده

Dynamic Power Control in a Hardware Neural Network with Error-Configurable MAC Units

Maedeh Ghaderi - Arvin Delavari - Faraz Ghoreishy - Sattar Mirzakuchaki

Current-Mode Wideband Frontends With Linearity Enhancement for 5G Receivers

Adibeh Rahmani - Mortaza Mojarad - Seyed Sadra Kashef

First Principles Study of Optical and Electrical Properties for Mixed-halide 2D BA2PbBr4-xClx (x=0, 2, and 4) as an Active Layer of Perovskite Light Emitting Diode

ُSamad Shokouhi - Seyedeh Bita Saadatmand - Vahid Ahmadi

A Low-Noise Amplifier with Bandwidth Extension and Noise Cancellation for 5G Receivers

Pardis Javanbakht - Mortaza Mojarad

Design of a High-Efficiency Deep Bias Class-AB Power Amplifier With 70% PAE at P1dB

Fazel Ziraksaz - Alireza Hassanzadeh

Modeling GaN-HEMT Electrostatic Band Diagram under full depletion approximation

Behnam Jafari Touchaei - Majid Shalchian

Design of Electrical Stimulation Circuit in 180 nm/1.8 V Standard CMOS Process

Askandar Nikzad - Mohammad Yavari - Amir Kashi

A Low-Power Inductor-Less Linear Wideband CMOS Balun-LNA Using Current Reuse And Linearity Techniques

Soroush Hashemi Bani - Mohammad Yavari

A Curvature Compensated CMOS Bandgap Voltage Reference With 6.8 ppm/°C Temperature Coefficient and Low Quiescent Current

Elaheh Pakravan - Mortaza Mojarad - Behboud Mashoufi

Possible Teleportation of Quantum States using Squeezed Sources and Photonic Integrated Circuits

Mobin Motaharifar - Hassan Kaatuzian - Mahmood Hasani

بیشتر

ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 41.5.5