کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / پنجمین کنفرانس بین المللی میکروالکترونیک ایران

Role of Doping Concentration of n- and p-Strip Regions on Optoelectronical Characterization in IBC-SHJ Solar Cell

نویسندگان :

Pegah Paknazar¹ Maryam Shakiba²

1- دانشگاه صنعتی جندی شاپور دزفول - Jundi-Shapur University of Technology, Dezful, Iran 2- دانشگاه صنعتی جندی شاپور دزفول - Jundi-Shapur University of Technology, Dezful, Iran

کلمات کلیدی :

Doping Concentration،n- and p-stripe regions،IBC-SHJ solar cell،Optoelectronical characterization

چکیده :

In this research, the photocarrier transmission mechanism and the effect of the doping concentration of n- and p-strip regions in interdigitated back contact silicon heterojunction (IBC-SHJ) cell efficiency have been studied. In this regards, short-circuit current density, open-circuit voltage, fill factor and cell efficiency values have been evaluated using J–V curves for different conditions. The doping concentration of the n- and p-strip regions have been changed using trial-and-error method to achieve improved efficiency in IBC-SHJ solar cell. The improved IBC-SHJ have no extra ARCs and more structural periodicity. Thus, a simple structure with improved conversion efficiency is proposed. The results have been shown that the n- and p-strip doping concentration were the most effective parameters on efficiency improvement. According to the results, the best doping concentration of Emitter and BSF regions to achieve improved efficiency is equal to 2×1019 cm-3 and 4.3×1018 cm-3 respectively.