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صفحه اصلی
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هفتمین کنفرانس بین المللی میکروالکترونیک ایران
Beyond Silicon: A Roadmap for Graphene-Based Field-Effect Transistors in RF Amplifiers, Biosensing, and Integrated Flexible Electronics
نویسندگان :
Sina Pourhajiagha Golestani
1
Esmaeil Najafiaghdam
2
Kiyumars Jalili
3
1- Tabriz University of Technology
2- Tabriz University of Technology
3- Tabriz University of Technology
کلمات کلیدی :
Graphene-based FET،biosensor،RF amplifier،flexible electronics،CMOS integration
چکیده :
Beyond silicon, graphene-based field-effect transistors (GFETs) provide a revolutionary platform for future electronics, utilizing outstanding carrier mobility, mechanical flexibility, atomic thickness, and ambipolar transport. This article provides a roadmap for GFETs in three dominant areas: radio-frequency (RF) amplifiers, biosensing, and integrated flexible electronics. On the RF side, GFETs show high-frequency operation above 10 GHz and are applicable to high-speed communication and signal amplification systems. For biosensing, their surface sensitivity enables label-free, real-time biomolecule detection, such as dopamine, with potential for wearable and implantable healthcare monitoring. GFETs provide flexible, biocompatible interfaces for skin-mounted and textile-integrated sensors in flexible electronics. In addition, integration methods such as monolithic CMOS readout, pseudo-resistor-based front-end amplifiers, and the gmID design approach are studied for gain, bandwidth, and power efficiency improvement. With the integration of material, device, and system-level advancements, this paper outlines the path towards scalable, reliable, and application-ready GFET-based systems beyond the limits of conventional silicon technology.
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ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 42.6.0