کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / هفتمین کنفرانس بین المللی میکروالکترونیک ایران

Beyond Silicon: A Roadmap for Graphene-Based Field-Effect Transistors in RF Amplifiers, Biosensing, and Integrated Flexible Electronics

نویسندگان :

Sina Pourhajiagha Golestani¹ Esmaeil Najafiaghdam² Kiyumars Jalili³

1- Tabriz University of Technology 2- Tabriz University of Technology 3- Tabriz University of Technology

کلمات کلیدی :

Graphene-based FET،biosensor،RF amplifier،flexible electronics،CMOS integration

چکیده :

Beyond silicon, graphene-based field-effect transistors (GFETs) provide a revolutionary platform for future electronics, utilizing outstanding carrier mobility, mechanical flexibility, atomic thickness, and ambipolar transport. This article provides a roadmap for GFETs in three dominant areas: radio-frequency (RF) amplifiers, biosensing, and integrated flexible electronics. On the RF side, GFETs show high-frequency operation above 10 GHz and are applicable to high-speed communication and signal amplification systems. For biosensing, their surface sensitivity enables label-free, real-time biomolecule detection, such as dopamine, with potential for wearable and implantable healthcare monitoring. GFETs provide flexible, biocompatible interfaces for skin-mounted and textile-integrated sensors in flexible electronics. In addition, integration methods such as monolithic CMOS readout, pseudo-resistor-based front-end amplifiers, and the gmID design approach are studied for gain, bandwidth, and power efficiency improvement. With the integration of material, device, and system-level advancements, this paper outlines the path towards scalable, reliable, and application-ready GFET-based systems beyond the limits of conventional silicon technology.