کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / پنجمین کنفرانس بین المللی میکروالکترونیک ایران

Design of a High-Efficiency Deep Bias Class-AB Power Amplifier With 70% PAE at P1dB

نویسندگان :

Fazel Ziraksaz¹ Alireza Hassanzadeh²

1- دانشگاه شهید بهشتی 2- دانشگاه شهید بهشتی

کلمات کلیدی :

Power Amplifier (PA)،Deep Bias Class-AB،Gallium Nitride (GaN)،High Power-Added Efficiency (PAE)،Harmonic Termination Network (HTN)

چکیده :

This paper presents a high-efficiency class-AB gallium nitride (GaN) power amplifier (PA) in the frequency range of 800-900MHz. The proposed class-AB PA is deeply biased to achieve high efficiency. The suggested PA is minimized the overlap between the output current and the output voltage waveforms to reduce power loss. Also, the proposed structure is reduced radiation and interference in other bands by using series stubs instead of short circuited and open circuited stubs in the input and output matching networks. The result indicates that the adjacent channel power ratio (ACPR) is around 37dBc. At the gate and drain, lines have been used instead of inductors. Simulation results of the proposed PA show that 17 dB Gain, 42.5dBm output power, 41.86dBm P1dB, and 70% power-added efficiency (PAE)