کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / پنجمین کنفرانس بین المللی میکروالکترونیک ایران

Design of a High-Efficiency Deep Bias Class-AB Power Amplifier With 70% PAE at P1dB

نویسندگان :

Fazel Ziraksaz¹ Alireza Hassanzadeh²

1- دانشگاه شهید بهشتی 2- دانشگاه شهید بهشتی

کلمات کلیدی :

Power Amplifier (PA)،Deep Bias Class-AB،Gallium Nitride (GaN)،High Power-Added Efficiency (PAE)،Harmonic Termination Network (HTN)

چکیده :

This paper presents a high-efficiency class-AB gallium nitride (GaN) power amplifier (PA) in the frequency range of 800-900MHz. The proposed class-AB PA is deeply biased to achieve high efficiency. The suggested PA is minimized the overlap between the output current and the output voltage waveforms to reduce power loss. Also, the proposed structure is reduced radiation and interference in other bands by using series stubs instead of short circuited and open circuited stubs in the input and output matching networks. The result indicates that the adjacent channel power ratio (ACPR) is around 37dBc. At the gate and drain, lines have been used instead of inductors. Simulation results of the proposed PA show that 17 dB Gain, 42.5dBm output power, 41.86dBm P1dB, and 70% power-added efficiency (PAE)

لیست مقالات

لیست مقالات بایگانی شده

Beyond Silicon: A Roadmap for Graphene-Based Field-Effect Transistors in RF Amplifiers, Biosensing, and Integrated Flexible Electronics

Sina Pourhajiagha Golestani - Esmaeil Najafiaghdam - Kiyumars Jalili

Low-Overhead Behavioral Locking for Security of Analog and AMS Integrated Circuits

Paria Farajzadeh - Samad Sheikhaei

ساخت حسگر پیزومقاومتی مبتنی بر گرافن ناشی از لیزر بر روی فیلم پلی ایمیدی

علیرضا اکبرزاده - کریم شلش نژاد - هادی ولادی - ابراهیم صفری

A Low-Noise Amplifier with Bandwidth Extension and Noise Cancellation for 5G Receivers

Pardis Javanbakht - Mortaza Mojarad

Three-Phase Bidirectional Integrated Meter Using Hall Effect Sensor in 0.5um CMOS Process

Shayan Anzali - Morteza Mousazadeh - Khayrollah Hadidi

Characteristics of Electrophoretic Graphene-oxide (GO) Film on Permalloy (Ni-Fe) Thin Film Sputtered on Copper Substrate

Ali Rezaei

طراحی و شبیه‌سازی جمع کننده 64 بیتی سریع با استفاده از ترانزیستورهای نانو لوله کربنی (CNTFET)

علیرضا جعفری تازه کند - جواد جاویدان

Frequency Response and Design Based on gm/ID of Amplifier in CNFET Technology

S. Mohammadali Zanjani - Mehdi Dolatshahi - Massoud Dousti - Zahra Alaie - Ata Jahangir Moshayedi - Arash Mehrabi

Electrically-Driven Tunable Acoustic Fields for Acoustofluidic Particle Manipulation

Elahe Hosseini - Behdad Barahimi - Sara Darbari - Iman Halvaei - Mohammad Kazem Moravvej-Farshi

An Improved 8-Bit Flash ADC Evaluated with Histogram-Based Error Detection Concept

Seyed Mohammadreza Heydarian - Nabiollah Shiri

بیشتر

ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 42.6.0