کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / ششمین کنفرانس بین المللی میکروالکترونیک ایران

Design and Simulation of a 2.4 GHz Class E Power Amplifier With High PAE and Linearity Improvement in 0.13μm CMOS Technology

نویسندگان :

Hamidreza Taghavi gharaghaji¹ Morteza Mojarad²

1- دانشگاه ارومیه 2- دانشگاه ارومیه

کلمات کلیدی :

RF Power Amplifier،Class-E،PAE

چکیده :

This paper presents a Class-E radio frequency power amplifier with enhanced linearity and efficiency in TSMC 0.13 µm CMOS technology. A cascode Class-E with a new driver circuit and a novel optimum biasing technique has been designed to improve the PAE. In order to improve the linearity, the Outphasing technique has been used. Simulation results prove that the achieved PAE is 64% for the operating frequency of 2.4 GHz and the third order intermodulation products decrease by up to approximately 10 dB.

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بیشتر

ثمین همایش، سامانه مدیریت کنفرانس ها و جشنواره ها - نگارش 41.5.5