کنفرانس بین المللی میکروالکترونیک ایران

صفحه اصلی / هفتمین کنفرانس بین المللی میکروالکترونیک ایران

A 7.5 GHz, 60 dB Regulated Cascode Transimpedance Amplifier in 180-nm CMOS Technology for Optoelectronic Applications

نویسندگان :

Sara Ghorbani¹ Saeed Olyaee² Mohammad Hossein Maghami³

1- دانشگاه تربیت دبیر شهید رجایی 2- دانشگاه تربیت دبیر شهید رجایی 3- دانشگاه تربیت دبیر شهید رجایی

کلمات کلیدی :

Regulated Cascode،CMOS Technology،Inductive Peaking Technique،Transimpedance Amplifier (TIA)،Optical Time-Domain Reflectometer (OTDR)

چکیده :

This paper presents the design of a transimpedance amplifier (TIA) with a gain of 60 dB and a bandwidth of 7.5 GHz. The circuit is implemented using 180-nm CMOS technology and is intended for use in optoelectronic systems, such as optical time-domain reflectometers (OTDRs). The amplifier structure is based on a Regulated Cascode (RGC) topology combined with an inductive network. It includes two common-source stages that provide high transimpedance gain. A source follower stage is added at the output to reduce the output impedance and improve signal buffering. To address the bandwidth limitations caused by parasitic capacitances in the MOSFET devices, inductive peaking techniques are employed. These help to extend the amplifier’s frequency response. In addition, a voltage-to-current negative feedback loop is used to further enhance the bandwidth and stabilize the gain. The complete design is verified through simulations using Cadence software. The simulations evaluate key performance metrics, including transimpedance gain, −3 dB bandwidth, and input-referred noise. Results show that the amplifier achieves high gain, wide bandwidth, and low noise, making it suitable for high-speed optoelectronic applications.