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پنجمین کنفرانس بین المللی میکروالکترونیک ایران
Impact of Geometrical and Process Design Parameters on the Performance of Schottky Barrier Reconfigurable Field Effect Transistor
نویسندگان :
Hamid Reza Heydari (دانشگاه آزاد اسلامی واحد یادگار امام خمینی(ره) شهرری) , Zahra Ahangari (دانشگاه آزاد اسلامی واحد یادگار امام خمینی(ره) شهرری) , Hamed Nematian (دانشگاه آزاد اسلامی واحد یادگار امام خمینی(ره) شهرری) , Kian Ebrahim Kafoori (دانشگاه آزاد اسلامی واحد یادگار امام خمینی(ره) شهرری)
کلمات کلیدی :
Reconfigurable Transistor،Schottky Barrier Transistor،Direct Tunneling،Thermionic Emission
چکیده :
In this study, the electrical properties of a Schottky Barrier Reconfigurable Field Effect Transistor (SBRFET) are thoroughly evaluated with the variation of important design parameters. The device proposed in this study operates in both n-type and p-type modes by exploiting electrical doping rather than additional physical doping. One of the critical design parameters is the gate work function, which significantly affects the charge density in the channel and subsequently alters the tunneling rate. The findings reveal that gate length variation has a negligible impact on the device's performance. The device achieved an on/off current ratio of 2×107 and a subthreshold swing of 87.5 mV/dec for n-type operation, while for p-type operation, it achieved an on/off current ratio of 1.5×106 with a subthreshold swing of 95.7 mV/dec. The results of this study pave the way for developing high-speed, low-power digital circuits with reprogrammable logic.
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